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2SJ681

Toshiba
Part Number 2SJ681
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Nov 24, 2006
Detailed Description TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII) 2SJ681 2SJ681 Relay Drive, DC−DC Converter and M...
Datasheet PDF File 2SJ681 PDF File

2SJ681
2SJ681

Overview
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII) 2SJ681 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.
12 Ω (typ.
) (VGS = −10 V) z High forward transfer admittance: |Yfs| = 5.
0 S (typ.
) z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) 1.
5 ± 0.
2 6.
5 ± 0.
2 5.
2 ± 0.
2 Unit: mm 0.
6 MAX.
1.
6 5.
5 ± 0.
2 0.
9 1.
1 ± 0.
2 0.
6 MAX.
4.
1 ± 0.
2 5.
7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note...


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