DatasheetsPDF.com

MRFG35010AR1

Part Number	MRFG35010AR1
Manufacturer	Freescale Semiconductor
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Published	Dec 4, 2006
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 1, 6/2006 Gallium Arsenid...
Datasheet	MRFG35010AR1 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev.
1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications.
Characterized from 500 to 5000 MHz.
Device is unmatched and is suitable for use in Class AB or Class A linear base station applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 140 mA, Pout = 1 Watt Avg.
, f = 3550 MHz, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain —10 dB Drain Efficiency — 25% ACPR @ 5 MHz Offset — - 43 dBc in 3.
84 MHz Channel Bandwidth • 10 Watts P1dB @ 3550 MHz, CW • Excellent Phas...

Similar Datasheet

MRFG35010ANT1 RF Power Field Effect Transistor - Freescale Semiconductor
MRFG35010AR1 Gallium Arsenide PHEMT RF Power Field Effect Transistor - Freescale Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)