Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
Description
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PD - 91664B
IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY
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Product Summary
Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The efficient geometr...
International Rectifier
IRFG5210 PDF File
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