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MRF18030BSR3

Part Number	MRF18030BSR3
Manufacturer	Motorola
Description	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR
Published	Feb 15, 2007
Detailed Description	MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18030B/D The RF MOSFET Line RF ...
Datasheet	MRF18030BSR3 PDF File

Overview

MOTOROLA www.
DataSheet4U.
com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18030B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.
8 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
Specified for GSM 1930 – 1990 MHz.
• Typical GSM Performance: Power Gain – 14 dB (Typ) @ 30 Watts Efficiency – 50% (Typ) @ 30 Watts • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR...

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MRF18030BSR3 THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR - Motorola

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