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RD01MUS1

Mitsubishi Electric
Part Number RD01MUS1
Manufacturer Mitsubishi Electric
Description Silicon RF Power MOS FET
Published Feb 21, 2007
Detailed Description www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 4...
Datasheet PDF File RD01MUS1 PDF File

RD01MUS1
RD01MUS1

Overview
www.
DataSheet4U.
com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 4.
4+/-0.
1 1.
6+/-0.
1 LOT No.
3.
9+/-0.
3 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.
5+/-0.
1 RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
TYPE NAME FEATURES High power gain: Pout>0.
8W, Gp>14dB @Vdd=7.
2V,f=520MHz High Efficiency: 65%typ.
0.
8 MIN 2.
5+/-0.
1 1 2 1.
5+/-0.
1 3 1.
5+/-0.
1 0.
4 +0.
03 -0.
05 Terminal No.
1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
0.
4+/-0.
07 0.
5+/-0.
07 0.
4+/-0.
07 0.
1 MAX RoHS COMPLIANT RD01MUS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.
Lead in high melting temperature type solders(i.
e.
tin-lead solder alloys containing ...


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