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HAT2058R

Renesas Technology
Part Number HAT2058R
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Feb 27, 2007
Detailed Description HAT2058R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate ...
Datasheet PDF File HAT2058R PDF File

HAT2058R
HAT2058R

Overview
HAT2058R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1234 2 4 G G S1 MOS1 S3 MOS2 Preliminary REJ03G1174-0300 Rev.
3.
00 Aug 25, 2009 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Absolute Maximum Ratings Item Symbol Value Drain to source voltage VDSS 100 Gate to source voltage Drain current Drain peak current VGSS ID Note 2 ID (pulse) Note 1 ±20 4 32 Body-drain diode reverse drain current IDR 4 Avalanche current IAP Note 4 — Avalanche energy EAR Note 4 — Channel dissipation Pch Note 2 2 Pch Note 3 3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 μs, duty cycle ≤ 1% 2.
1 Drive operation: When using the glass epoxy bo...


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