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IRLI540N

International Rectifier
Part Number IRLI540N
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Mar 21, 2007
Detailed Description www.DataSheet4U.com PD - 9.1497A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l H...
Datasheet PDF File IRLI540N PDF File

IRLI540N
IRLI540N

Overview
www.
DataSheet4U.
com PD - 9.
1497A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.
5KVRMS … l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated Description l l IRLI540N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.
044Ω G ID = 23A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of application...


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