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FDAF59N30
N-Channel MOSFET
Description
FDAF59N30 300V N-Channel MOSFET October 2006 FDAF59N30 300V N-Channel MOSFET Features 34A, 300V, RDS(on) = 0.056Ω @VGS = 10 V Low gate charge ( typical 77 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect
transistor
s are produ...
Fairchild Semiconductor
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FDAF59N30
N-Channel MOSFET
- Fairchild Semiconductor
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