N-Channel Power Trench MOSFET
Description
FDMC8554 N-Channel PowerTrench® MOSFET
February 2007
FDMC8554 N-Channel Power Trench® MOSFET
20V, 16.5A, 5mΩ Features General Description
Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A Low Profile - 1mm max in a MicroFET 3.3x3.3 mm RoHS Compliant
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This N-Channel MOSFET is a rugged gate version of Fairchil...
Fairchild Semiconductor
FDMC8554 PDF File
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