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CEA6861

Part Number	CEA6861
Manufacturer	CET
Description	P-Channel Enhancement Mode Field Effect Transistor
Published	May 6, 2007
Detailed Description	CEA6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = ...
Datasheet	CEA6861 PDF File

Overview

CEA6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -2.
4A, RDS(ON) = 135mΩ @VGS = -10V.
RDS(ON) = 180mΩ @VGS = -4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
D D S D G SOT-89 G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -60 Units V V A A W C ±20 -2.
4 -10 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Unit...

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CEA6861 P-Channel Enhancement Mode Field Effect Transistor - CET

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