Dual P-Channel Enhancement Mode Field Effect Transistor
Description
Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -3.8A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8 D1 7
CEM6607
5
D2 6
D2 5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOL...
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