N-Channel MOSFET
Description
CEF10N4
Sep. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
450V ,5.6A ,RDS(ON)= 700mΩ @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole.
G
D
6
G
D S TO-220F
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
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