N-Channel Field Effect Transistor
Description
CEFF634
Nov. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
250V , 6A , RDS(ON)=450mΩ @VGS=10V.
D
6
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole
G
G
D S
S
TO-220F
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parame...
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