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NJ36D

InterFET
Part Number NJ36D
Manufacturer InterFET
Description Silicon Junction Field-Effect Transistor
Published May 11, 2007
Detailed Description F-22 01/99 NJ36D Process Silicon Junction Field-Effect Transistor ¥ Monolithic Dual Construction ¥ High Frequency Amp...
Datasheet PDF File NJ36D PDF File

NJ36D
NJ36D

Overview
F-22 01/99 NJ36D Process Silicon Junction Field-Effect Transistor ¥ Monolithic Dual Construction ¥ High Frequency Amplifier ¥ Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S D G Die Size = 0.
026" X 0.
026" All Bond Pads = 0.
004" Sq.
Substrate is also Gate.
G D S Devices in this Databook based on the NJ36D Process.
Datasheet 2N5911, 2N5912 IFN5911, IFN5912 www.
DataSheet4U.
com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Elect...


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