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IRF2903ZPBF

International Rectifier
Part Number IRF2903ZPBF
Manufacturer International Rectifier
Description AUTOMOTIVE MOSFET
Published May 14, 2007
Detailed Description PD -96097 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra...
Datasheet PDF File IRF2903ZPBF PDF File

IRF2903ZPBF
IRF2903ZPBF

Overview
PD -96097 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 30V RDS(on) = 2.
4mΩ G S ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D G D S TO-220AB IRF2903ZPbF G D S Gate Drain Source Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Max.
260 180 75 1020 290 2.
0 ± 20 290 820 See Fig.
12a, 12b, 15, 16 -55 to + 175 Units A ™ d Ù h W W/°C V mJ A mJ °C g Thermal Resistance RθJC RθCS RθJA i 300 (1.
6mm from case ) 10 lbf in (1.
1N m) y y Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient k Parameter Typ.
Max.
0.
51 ––– 62 Units °C/W ij i ––– 0.
50 ––– www.
irf.
com 1 02/15/07 IRF2903ZPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS ...


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