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IRF2807S

International Rectifier
Part Number IRF2807S
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published May 28, 2007
Detailed Description PD - 94170 Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l...
Datasheet PDF File IRF2807S PDF File

IRF2807S
IRF2807S

Overview
PD - 94170 Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D IRF2807S IRF2807L VDSS = 75V RDS(on) = 13mΩ G S ID = 82A‡ Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package ...


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