DatasheetsPDF.com

IRLI2910

International Rectifier
Part Number IRLI2910
Manufacturer International Rectifier
Description POWER MOSFET
Published May 30, 2007
Detailed Description PD - 9.1384B PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Packag...
Datasheet PDF File IRLI2910 PDF File

IRLI2910
IRLI2910

Overview
PD - 9.
1384B PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.
5KVRMS … l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated Description l l IRLI2910 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.
026Ω G ID = 31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applic...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)