DatasheetsPDF.com

IRGBC30S

International Rectifier
Part Number IRGBC30S
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jun 5, 2007
Detailed Description PD - 9.688A IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Op...
Datasheet PDF File IRGBC30S PDF File

IRGBC30S
IRGBC30S

Overview
PD - 9.
688A IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation ( to 400 Hz) See Fig.
1 for Current vs.
Frequency Curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 2.
2V @VGE = 15V, I C = 18A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
www.
DataSheet4U.
com TO-220AB Absolute Maximum Ratings Param...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)