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IRGBC30U

International Rectifier
Part Number IRGBC30U
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jun 5, 2007
Detailed Description PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Op...
Datasheet PDF File IRGBC30U PDF File

IRGBC30U
IRGBC30U

Overview
PD - 9.
682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig.
1 for Current vs.
Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.
0V @VGE = 15V, I C = 12A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
www.
DataSheet4U.
com TO-220AB Absolute Maximum Ratings Parameter V...


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