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IRGIB15B60KD1

International Rectifier
Part Number IRGIB15B60KD1
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jun 9, 2007
Detailed Description PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) N...
Datasheet PDF File IRGIB15B60KD1 PDF File

IRGIB15B60KD1
IRGIB15B60KD1

Overview
PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C G E C VCES = 600V IC = 12A, TC=100°C tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel VCE(on) typ.
= 1.
80V Absolute Maximum Ratings www.
DataSheet4U.
com TO-220 Full-Pak Max.
600 19 12 A 38 38 19 12 38 2500 ±20 52 26 -55 to +175 °C 300 (0.
063 in.
(1.
6mm) from case) 10 lbf.
in (1.
1N.
m) W V Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Co...


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