INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 9.1129
IRGPC20K
INSULATED GATE BIPOLAR TRANSISTOR
Features
Short circuit rated - 10µs @ 125°C, VGE = 15V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(sat) ≤ 3.5V
@VGE = 15V, IC = 6.0A
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