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APTC80H29T3

Advanced Power Technology
Part Number APTC80H29T3
Manufacturer Advanced Power Technology
Description Full - Bridge Super Junction MOSFET Power Module
Published Jul 3, 2007
Detailed Description APTC80H29T3 Full - Bridge Super Junction MOSFET VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Applicati...
Datasheet PDF File APTC80H29T3 PDF File

APTC80H29T3
APTC80H29T3

Overview
APTC80H29T3 Full - Bridge Super Junction MOSFET VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 11 22 19 Q2 23 8 Q4 7 10 Power Module 13 14 Q1 Q3 18 Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 26 4 3 29 15 30 31 R1 32 16 27 • • • • www.
DataSheet4U.
com 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTC80H29T3 – Rev 0 September, 2004 Max ratings 800 15 11 60 ±30 290 156 24 0.
5 670 Unit V A V mΩ W A APTC80H29T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Sou...


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