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IRF530NL

Part Number	IRF530NL
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jul 6, 2007
Detailed Description	PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 10...
Datasheet	IRF530NL PDF File

Overview

PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching G RDS(on) = 90mΩ l Fully Avalanche Rated ID = 17A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount p...

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