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MRF5P20180R6

Part Number	MRF5P20180R6
Manufacturer	Motorola
Description	RF POWER FIELD EFFECT TRANSISTOR
Published	Jul 6, 2007
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D The RF Sub–M...
Datasheet	MRF5P20180R6 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF5P20180/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Designed for W–CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 1955 MHz, f2 = 1965 MHz, Channel Bandwidth = 3.
84 MHz, Adjacent Channels Measured over 3.
84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz.
Distortion Products Measured over a 3.
84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz, Each Carrier Pea...

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