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NE5510179A

NEC
Part Number NE5510179A
Manufacturer NEC
Description 3.5V OPERATION SILICON RF POWER MOSFET
Published Jul 9, 2007
Detailed Description PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES ...
Datasheet PDF File NE5510179A PDF File

NE5510179A
NE5510179A

Overview
PRELIMINARY DATA SHEET 3.
5 V OPERATION SILICON RF POWER MOSFET FOR 1.
9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.
5 dBm TYP VDS = 3.
5 V, IDQ = 200 mA, f = 1.
9 GHz, PIN = 22 dBm • HIGH LINEAR GAIN: 11 dB TYP VDS = 3.
5 V, IDQ = 200 mA, f = 1.
9 GHz, PIN = 5dBm • HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.
5 V, IDQ = 200 mA, f = 1.
9 GHz, PIN = 22 dBm • SINGLE SUPPLY: 2.
8 to 6.
0 V • SURFACE MOUNT PACKAGE: 5.
7x5.
7x1.
1 mm MAX 4.
2 Max OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A 1.
5 – 0.
2 Source Source 5.
7 Max 0.
6 – 0.
15 X Gate Drain 0.
8 – 0.
15 4.
4 Max Gate 1.
0 Max Drain 1.
2 Max 0.
8 Max 3.
6 – 0.
2 5.
7 Max 8 0.
4 – 0.
15 DESCRIPTION The NE5510179A is an ...


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