FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 46.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN
G1dB= 9.0dB at 5.3GHz to 5.9GHz ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM5359-45SL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at ...
