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IRF7101PBF

International Rectifier
Part Number IRF7101PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 14, 2007
Detailed Description www.DataSheet4U.com PD - 95162 IRF7101PbF Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSF...
Datasheet PDF File IRF7101PBF PDF File

IRF7101PBF
IRF7101PBF

Overview
www.
DataSheet4U.
com PD - 95162 IRF7101PbF Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 D1 D1 D2 D2 VDSS = 20V RDS(on) = 0.
10Ω ID = 3.
5A 3 4 6 5 Top View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a...


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