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GI80LS02

Part Number	GI80LS02
Manufacturer	GTM
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 4, 2007
Detailed Description	www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/15 REVISED DATE : GI80LS02 Description N-CHANNEL ENH...
Datasheet	GI80LS02 PDF File

Overview

www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/02/15 REVISED DATE : GI80LS02 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 8m 75A The GI80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
Features *Low On-resistance *Simple Drive Requirement *Fast Switching Speed Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
Max.
0.
50 0.
70 2...

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GI80LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

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