MICROWAVE POWER GaAs FET
Description
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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM1011-8L
TECHNICAL DATA FEATURES
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF P...
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