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RQK0606KGDQA
Silicon N Channel MOS FET Power Switching
REJ03G1497-0100 Rev.1.00 Jan 15, 2007
Features
Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching VDSS ≥ 60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D
3 1 2
2...
