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MG300Q2YS61

Part Number	MG300Q2YS61
Manufacturer	Toshiba Semiconductor
Description	High Power Switching Applications Motor Control Applications
Published	Oct 4, 2007
Detailed Description	www.DataSheet4U.com MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applicatio...
Datasheet	MG300Q2YS61 PDF File

Overview

www.
DataSheet4U.
com MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications · · · · · · High input impedance High speed: tf = 0.
3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.
6 V (max) Enhancement-mode Includes a complete half bridge in one package.
The electrodes are isolated from case.
Unit: mm Equivalent Circuit C1 G1 JEDEC E1 E1/C2 ― ― 2-109C4A JEITA TOSHIBA G2 E2 E2 Weight: 430 g (typ.
) Maximum Ratings (Tc = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current DC (Tc = 80°C) DC (Tc = 80°C) Symbol VCES VGES IC IF PC Tj Tstg Visol Terminal Mo...

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