DatasheetsPDF.com

M58WR064HT

ST Microelectronics
Part Number M58WR064HT
Manufacturer ST Microelectronics
Description 1.8 V supply Flash memories
Published Jan 19, 2008
Detailed Description www.DataSheet4U.com M58WR064HT M58WR064HB 64 Mbit (4 Mb x16, multiple bank, burst) 1.8 V supply Flash memories Features...
Datasheet PDF File M58WR064HT PDF File

M58WR064HT
M58WR064HT

Overview
www.
DataSheet4U.
com M58WR064HT M58WR064HB 64 Mbit (4 Mb x16, multiple bank, burst) 1.
8 V supply Flash memories Features ■ Supply voltage – VDD = 1.
7 V to 2 V for program, erase and read – VDDQ = 1.
7 V to 2.
24 V for I/O buffers – VPP = 12 V for fast program (optional) Synchronous/asynchronous read – Synchronous burst read mode: 66 MHz – Asynchronous/synchronous page read mode – Random access: 60 ns, 70 ns Synchronous burst read suspend Programming time – 8 µs by word typical for fast factory program – Double/quadruple word program option – Enhanced factory program options Memory blocks – Multiple bank memory array: 4 Mbit banks – Parameter blocks (top or bottom location) Dual operations – P...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)