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TSM1N60

N-Channel Power Enhancement Mode MOSFET

Description

www.DataSheet4U.com TSM1N60 N-Channel Power Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 600V ID = 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOS...

Taiwan Semiconductor

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