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TSM1N60S

Taiwan Semiconductor
Part Number TSM1N60S
Manufacturer Taiwan Semiconductor
Description 600V N-Channel Power MOSFET
Published Feb 22, 2008
Detailed Description TO-92 Pin Definition: 1. Gate 2. Drain 3. Source TSM1N60S 600V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(o...
Datasheet PDF File TSM1N60S PDF File

TSM1N60S
TSM1N60S

Overview
TO-92 Pin Definition: 1.
Gate 2.
Drain 3.
Source TSM1N60S 600V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 11 @ VGS =10V ID (A) 0.
3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features ● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge circuits ● Source to Drain d...


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