DatasheetsPDF.com

IPP080N06NG

Infineon Technologies
Part Number IPP080N06NG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description www.DataSheet4U.com IPB080N06N G IPP080N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching...
Datasheet PDF File IPP080N06NG PDF File

IPP080N06NG
IPP080N06NG

Overview
www.
DataSheet4U.
com IPB080N06N G IPP080N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 7.
7 80 V mΩ A Type IPB080N06N G IPP080N06N G Package Marking P-TO263-3-2 080N06N P-TO220-3-1 080N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 80 76 320 448 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C2) I D=80 A, R GS=25 Ω I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 214 -55 .
.
.
175 55/175/56 Current is limited by bondwire; with an R thJC=0.
7 K/W the chip is able to carry 107 A.
See figure 3 Rev.
1.
01 page 1 2006-05-02 www.
DataSheet4U.
com IPB080N06N G Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=150 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=60 V V GS=10 V, I D=80 A, V GS=10 V, I D=80 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=80 A 60 2.
1 3.
0 0.
01 Values typ.
IPP080N06N G Unit max.
0.
7 62 40 K/W 4 1 V µA - 1 100 47 1 6.
5 6.
2 1.
5 94 100 8 7.
7 - nA mΩ Ω S 3) Device on 40 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)