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IRF1902PBF

Part Number	IRF1902PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jun 24, 2008
Detailed Description	PD - 95496 IRF1902PbF HEXFET® Power MOSFET l l l www.DataSheet4U.com l l Ultra Low On-Resistance N-Channel MOSFET Surf...
Datasheet	IRF1902PBF PDF File

Overview

PD - 95496 IRF1902PbF HEXFET® Power MOSFET l l l www.
DataSheet4U.
com l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS 20V RDS(on) max (mW) 85@VGS = 4.
5V 170@VGS = 2.
7V ID 4.
0A 3.
2A These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infrared, or wave soldering techniques.
Description S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
20 4.
2 3.
4 17 2.
5 1.
6 0.
02 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ.
––– ––– Max.
20 50 Units °C/W www.
irf.
com 1 8/10/04 IRF1902PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On ...

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IRF1902PBF HEXFET Power MOSFET - International Rectifier

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