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IXTP2N80

IXYS Corporation
Part Number IXTP2N80
Manufacturer IXYS Corporation
Description High Voltage MOSFET
Published Jul 7, 2008
Detailed Description Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N...
Datasheet PDF File IXTP2N80 PDF File

IXTP2N80
IXTP2N80

Overview
Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V = 2 A = 6.
2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 800 800 ±20 ±30 2 8 2 V V V V A A A mJ mJ V/ns W °C °C °C Nm/lb.
in.
4 300 g °C TO-220AB (IXTP) GD S D (TAB) TO-263 AA (IXTA) TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C 6 200 5 54 -55 .
.
.
+150 150 -55 .
.
.
+150 G S D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.
13/10 Features Maximum lead temperature for soldering Ÿ International standard packages Ÿ Low RDS (on) HDMOSTM process Ÿ Rugged polysilicon gate cell structure Ÿ Low package inductance (< 5 nH) - easy to drive and to protect Ÿ Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
800 2.
5 5.
5 ±100 TJ = 125°C 25 500 6.
2 V V nA µA µA Ω Applications VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Ÿ Switch-mode and resonant-mode power supplies Ÿ Flyback inverters Ÿ DC choppers Advantages VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Ÿ Space savings Ÿ High power density IXYS reserves the right to change limits, test conditions, and dimensions.
98541A 03/24/00 © 2000 IXYS All rights reserved 1-2 IXTA 2N80 IXTP 2N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
1.
0 2.
0 440 VGS = 0 V, VDS = 25 V, f = 1 MHz 56 15 15 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 ID25 RG = 18Ω, (External) 18 30 15 22 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 ID25 5.
5 12 2.
3 (IXTP) 0.
5 S pF pF pF ns ns ns ns Dim.
Millimeter Min.
Max.
4.
06 2.
03 0.
51 1.
...


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