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APT40M70JVFR

Advanced Power Technology
Part Number APT40M70JVFR
Manufacturer Advanced Power Technology
Description POWER MOS V FREDFET
Published Aug 16, 2008
Detailed Description APT40M70JVFR 400V 53A 0.070Ω S G D S POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel en...
Datasheet PDF File APT40M70JVFR PDF File

APT40M70JVFR
APT40M70JVFR

Overview
APT40M70JVFR 400V 53A 0.
070Ω S G D S POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
www.
DataSheet4U.
com SO ISOTOP ® 2 T- 27 "UL Recognized" • Faster Switching • Lower Leakage • Popular SOT-227 Package • Avalanche Energy Rated • FAST RECOVERY BODY DIODE G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT40M70JVFR UNIT Volts Amps 400 53 212 ±30 ±40 450 3.
6 -55 to 150 300 53 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 400 0.
07 250 1000 ±100 2 4 (VGS = 10V, 26.
5A) Ohms µA 2-2005 050-5893 Rev A Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 320V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.
5mA) nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitanc...


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