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AP4435M

Advanced Power Electronics
Part Number AP4435M
Manufacturer Advanced Power Electronics
Description ENHANCEMENT MODE POWER MOSFET
Published Sep 20, 2008
Detailed Description AP4435M Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance www.DataSheet4U.com D D D D P-...
Datasheet PDF File AP4435M PDF File

AP4435M
AP4435M

Overview
AP4435M Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance www.
DataSheet4U.
com D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G S -30V 20mΩ -8A ▼ Fast Switching SO-8 S S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 Rating -30 ± 20 -8 -6 -50 2.
5 0.
02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current3 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max.
50 Unit ℃/W Data and specifications subject to change without notice 20020430 AP4435M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj www.
DataSheet4U.
com Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min.
Typ.
Max.
Units -30 -1 -0.
037 20 35 -3 -1 -25 ±100 - V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-8A VGS=-4.
5V, ID=-5A 20 36 5.
5 3.
5 12 8 75 40 1530 900 280 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-15V, ID=-8A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ± 20V ID=-4.
6A VDS=-15V VGS=-10V VDS=-15V ID=-1A RG=6Ω,VGS=-10V RD=...


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