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MRF392

Part Number	MRF392
Manufacturer	Motorola
Description	BROADBAND PUSH-PULL RF POWER TRANSISTOR
Published	Oct 8, 2008
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF392/D The RF Line NPN Silicon Push-Pull RF Power Tran...
Datasheet	MRF392 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF392/D The RF Line NPN Silicon Push-Pull RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.
• Specified 28 Volt, 400 MHz Characteristics — Output Power = 125 W Typical Gain = 10 dB Efficiency = 55% (Typ) • Built–In Input Impedance Matching Networks for Broadband Operation • Push–Pull Configuration Reduces Even Numbered Harmonics www.
DataSheet4U.
com MRF392 125 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON • Gold Metallization System for High Reliability • 100% Tested for Load Mismatch • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
2 6 5, 8 7 3 CASE 744A–01, STYLE 1 1, 4 The MRF392 is two transistors in a single package with separate base and collector leads and emitters common.
This arrangement provides the designer with a space saving device capable of operation in a push–pull configuration.
PUSH–PULL TRANSISTORS MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 30 60 4.
0 16 270 1.
54 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.
65 Unit °C/W NOTE: 1.
This device is designed for RF operation.
The total device dissipation rating applies only when the device is operated as an RF push–pull amplifier.
REV 8 RF DEVICE DATA ©MOTOROLA Motorola, Inc.
1997 MRF392 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = ...

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