INSULATED GATE BIPOLAR TRANSISTOR
Description
PD- 93818
IRGP30B120KD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE(on) Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C) www.DataSheet4U.com 10 µs Short Circuit Capability Square RBSOA Ultrasoft Diode Recovery Characteristics Positive VCE(on) Temperature Coefficient Extende...
Similar Datasheet
