HAT2197R
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 5.3 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
8 7 65
56 7 8 DD D D
1 234
REJ03G0061-0201Z Rev.2.01
Nov.30.2016
4 G
SSS 12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Dra...
