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H7P1002DL

Renesas Technology
Part Number H7P1002DL
Manufacturer Renesas Technology
Description Silicon P Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Feature...
Datasheet PDF File H7P1002DL PDF File

H7P1002DL
H7P1002DL

Overview
H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.
1.
00 Nov 16, 2007 Features • Low on-resistance RDS(on) = 85 mΩ typ.
www.
DataSheet4U.
com • Low drive current • 4.
5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 1 2 3 G 1.
Gate 2.
Drain 3.
Source 4.
Drain H7P0601DS 1 2 3 S H7P0601DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channe...


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