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HAT2093R

Renesas Technology
Part Number HAT2093R
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT2093R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4.5 V gat...
Datasheet PDF File HAT2093R PDF File

HAT2093R
HAT2093R

Overview
HAT2093R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4.
5 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1185-0300 (Previous: ADE-208-1237A) Rev.
3.
00 Sep 07, 2005 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Rev.
3.
00 Sep 07, 2005 page 1 of 3 HAT2093R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS 30 VGSS ±20 Drain current Drain peak current ID 9 ID (pulse) Note 1 72 Body-drain diode reverse drain current IDR 9 Channel dissipation Pch Note 2 2 Channel dissipation Pch Note 3 3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.
6 mm), PW ≤ 10 s 3.
2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.
6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4.
Pulse test (Ta = 25°C) Symbol Min Typ Max Unit Test Conditions V (BR) DSS 30 — — V ID = 10 mA, VGS = 0 V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 IGSS — — ±10 µA VGS = ±16 V, VDS = 0 IDSS — — 1 µA VDS = 30 V, VGS = 0 VGS (off) 1.
0 — 2.
5 V VDS = 10 V, ID = 1 mA RDS (on) — 18 23 mΩ ID = 4.
5 A, VGS = 10 V Note 4 RDS (on) — 27 39 mΩ ID = 4.
5 A, VGS = 4.
...


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