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PBRP123YT

NXP
Part Number PBRP123YT
Manufacturer NXP
Description PNP 800 MA
Published Jan 4, 2009
Detailed Description PBRP123YT PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 17 December 2007 Product data sheet 1. Product p...
Datasheet PDF File PBRP123YT PDF File

PBRP123YT
PBRP123YT

Overview
PBRP123YT PNP 800 mA, 40 V BISS RET; R1 = 2.
2 kΩ, R2 = 10 kΩ Rev.
01 — 17 December 2007 Product data sheet 1.
Product profile 1.
1 General description www.
DataSheet4U.
com 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBRN123YT.
1.
2 Features I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.
3 Applications I Digital application in automotive and indust...


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