DatasheetsPDF.com

SIHFZ44L

Vishay Siliconix
Part Number SIHFZ44L
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Jan 10, 2009
Detailed Description IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) ...
Datasheet PDF File SIHFZ44L PDF File

SIHFZ44L
SIHFZ44L


Overview
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) 60 VGS = 10 V 67 Qgs (nC) 18 Qgd (nC) 25 Configuration Single 0.
028 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ44S, SiHFZ44S) • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and lowest possible on-resistance in any existing surface mount package.
The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0 W in a typical surface mount application.
The through-hole version (IRFZ44L, SiHFZ44L) is available for low profile applications.
ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFZ44S-GE3 Lead (Pb)-free Note IRFZ44SPbF SiHFZ44S-E3 a.
See device orientation.
D2PAK (TO-263) SiHFZ44STRR-GE3a IRFZ44STRRPbFa SiHFZ44STR-E3a D2PAK (TO-263) SiHFZ44STRL-GE3a IRFZ44STRLPbFa SiHFZ44STL-E3a I2PAK (TO-262) IRFZ44LPbF SiHFZ44L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltagef Gate-Source Voltagef Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single P...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)