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HN7G08FE

Toshiba Semiconductor
Part Number HN7G08FE
Manufacturer Toshiba Semiconductor
Description General-Purpose Amplifier Applications
Published Feb 10, 2009
Detailed Description HN7G08FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G08FE Unit: mm General-Purpose Amplifier Application...
Datasheet PDF File HN7G08FE PDF File

HN7G08FE
HN7G08FE

Overview
HN7G08FE TOSHIBA Multichip Discrete Device www.
DataSheet4U.
com HN7G08FE Unit: mm General-Purpose Amplifier Applications Switching and Muting Switch Applications Q1 Low saturation voltage: VCE (sat) (1) = −15 mV (typ.
) @IC = −10 mA/IB = −0.
5 mA Large collector current: IC = −400 mA (max) Q1: 2SA1955F Q2: RN1106F Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −15 −12 −5 −400 −50 Unit V V V mA mA (E1) 1.
EMITTER1 (B1) 2.
BASE1 3.
COLLECTOR2 (C2) (E2) 4.
EMITTER2 (B2) 5.
BASE2 6.
COLLECTOR1 (C1) JEDEC JEITA TOSHIBA Weight: 0.
003 g (typ.
) ― ― 2-2J1E Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 5 100 Unit V V V mA Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC* Tj Tstg Rating 100 150 −55~150 Unit mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
* Total rating.
1 2007-11-01 HN7G08FE Q1 Electrical Characteristics (Ta = 25°C) www.
DataSheet4U.
com Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacita...


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