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IRHM3Z60

International Rectifier
Part Number IRHM3Z60
Manufacturer International Rectifier
Description RADIATION HARDENED POWER MOSFET THRU-HOLE
Published Apr 20, 2009
Detailed Description www.datasheet4u.com PD - 91701B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radia...
Datasheet PDF File IRHM3Z60 PDF File

IRHM3Z60
IRHM3Z60

Overview
www.
datasheet4u.
com PD - 91701B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si) RDS(on) 0.
014Ω 0.
014Ω 0.
014Ω 0.
014Ω ID 35*A 35*A 35*A 35*A IRHM7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY ™ ® TO-254AA International Rectifier’s RAD-Hard ogy provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
HEXFET® technol- Feat...


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