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TC55NEM216AFTN55

Part Number	TC55NEM216AFTN55
Manufacturer	Toshiba Semiconductor
Description	(TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Published	Jun 30, 2009
Detailed Description	TC55NEM216AFTN55,70 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WO...
Datasheet	TC55NEM216AFTN55 PDF File

Overview

TC55NEM216AFTN55,70 www.
DataSheet4U.
com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.
Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns.
It is automatically placed in low-power mode at 1 µA standby current (typ) when chip enable ( CE ) is asserted high.
There are two control inputs.
CE is used to select the device and for data retention control, and output enable ( OE ) provides fast memory access.
Data byte control pin ( LB , UB ) provides lower and upper byte access.
This device is well suited to various microprocessor system applications where high speed, low power and battery backu...

Similar Datasheet

TC55NEM216AFTN55 (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS - Toshiba Semiconductor
TC55NEM216AFTN70 (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS - Toshiba Semiconductor

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