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SSM3J16CT

Toshiba Semiconductor
Part Number SSM3J16CT
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 7, 2009
Detailed Description SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI) SSM3J16CT High Speed Switching Applicatio...
Datasheet PDF File SSM3J16CT PDF File

SSM3J16CT
SSM3J16CT

Overview
SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI) SSM3J16CT High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.
5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.
5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDSS −20 V VGSS ±10 V ID −100 mA IDP −200 PD(Note1) 100 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application o...


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